for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 104 parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 17.5 - 21.0 21.0 - 24.0 24.0 - 25.5 ghz gain 10 13 10 13 8 11 db gain variation over temperature 0.02 0.03 0.02 0.03 0.02 0.03 db/ c input return loss 10 10 5 db output return loss 9 9 12 db output power for 1 db compression (p1db) 18 21 19 22 19 22 dbm saturated output power (psat) 23 23.5 23 dbm output third order intercept (ip3) 27 26 26 dbm noise figure 8 8 9 db supply current (idd)(vdd = 5v, vgg = -1v typ.) 84 84 84 ma hmc442lc3b gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v02.1208 general description features functional diagram the hmc442lc3b is an efficient gaas phemt mmic medium power ampli er housed in a leadless pb free rohs compliant smt package. operating between 17.5 and 25.5 ghz, the ampli er provides 13 db of gain, +23 dbm of saturated power and 26% pae from a +5v supply voltage. this 50 ohm matched ampli er does not require any external components, making it an ideal linear gain block or driver for hmc smt mixers. the hmc442lc3b allows the use of surface mount manufacturing techniques. gain: 13 db saturated power: +23 dbm @ 26% pae supply voltage: +5v 50 ohm matched input/output rohs compliant 3 x 3 mm smt package electrical speci cations, t a = +25 c, vdd = +5v, idd = 84 ma* typical applications the hmc442lc3b is an ideal gain block or driver ampli er for: ? point-to-point radios ? point-to-multi-point radios ? lo driver for hmc mixers ? military ew & ecm *adjust vgg between -1.5 to -0.5v to achieve idd = 84 ma typical.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 105 psat vs. temperature output return loss vs. temperature hmc442lc3b -20 -15 -10 -5 0 5 10 15 14 17 20 23 26 29 s21 s11 s22 response (db) frequency (ghz) 0 4 8 12 16 20 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c return loss (db) frequency (ghz) -20 -16 -12 -8 -4 0 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c return loss (db) frequency (ghz) input return loss vs. temperature broadband gain & return loss 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c p1db (dbm) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c psat (dbm) frequency (ghz) p1db vs. temperature gain vs. temperature gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v02.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 106 0 4 8 12 16 20 24 28 -10 -6 -2 2 6 10 14 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 28 -10 -6 -2 2 6 10 14 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) power compression @ 18 ghz output ip3 vs. temperature 0 5 10 15 20 25 30 4.5 5 5.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm ) vdd supply voltage (vdc) noise figure vs. temperature gain, power and output ip3 vs. supply voltage @ 23 ghz -60 -50 -40 -30 -20 -10 0 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c isolation (db) frequency (ghz) reverse isolation vs. temperature 14 18 22 26 30 34 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c psat (dbm) frequency (ghz) 0 2 4 6 8 10 12 16 17 18 19 20 21 22 23 24 25 26 27 +25c +85c -40c noise figure (db) frequency (ghz) power compression @ 23 ghz hmc442lc3b gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v02.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 107 outline drawing absolute maximum ratings drain bias voltage (vdd) +5.5 vdc gate bias voltage (vgg) -8.0 to 0 vdc rf input power (rfin)(vdd = +5vdc, idd = 85 ma) +16 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 5.46 mw/c above 85 c) 0.491 w thermal resistance (channel to ground paddle) 183 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a vdd (v) idd (ma) +4.5 82 +5.0 84 +5.5 86 note: ampli er will operate over full voltage range shown above typical supply current vs. vdd notes: 1. package body material: alumina 2. lead and ground paddle plating: 30 - 80 microinches gold over 50 microinches minimum nickel. 3. dimensions are in inches [millimeters]. 4. lead spacing tolerance is non-cumulative 5. package warp shall not exceed 0.05mm datum -c- 6. all ground leads and ground paddle must be soldered to pcb rf ground. hmc442lc3b gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v02.1208 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 108 pin descriptions pin number function description interface schematic 1, 3, 7, 9 gnd package bottom must also be connected to rf/dc ground 2rfin this pin is ac coupled and matched to 50 ohms. 4, 6, 10, 12 n/c this pin may be connected to rf/dc ground. performance will not be affected. 5vgg gate control for ampli er. adjust to achieve id of 84 ma. please follow mmic ampli er biasing procedure application note. 8rfout this pin is ac coupled and matched to 50 ohms. 11 vd d power supply voltage for the ampli er. external bypass capacitors are required. application circuit component value c1, c2 100 pf c3, c4 1,000 pf c5, c6 2.2 f hmc442lc3b gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v02.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 109 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 109712 [1] item description j1 - j2 pcb mount sma connector j3 - j6 dc pin c1 - c2 100 pf capacitor, 0402 pkg. c3 - c4 1000 pf capacitor, 0603 pkg. c5 - c6 2.2 f capacitor, tantalum u1 hmc442lc3b ampli er pcb [2] 109710 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc442lc3b gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v02.1208
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